High photoresponsivity in an all-graphene p-n vertical junction photodetector.

Abstract

Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report high-efficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n… (More)
DOI: 10.1038/ncomms4249

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