High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions

@article{Ragnarsson2005HighP8,
  title={High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions},
  author={L. A. Ragnarsson and Simone Severi and L Trojmanm and D. P. Brunco and K. Johnson and Annelies Delabie and Tom Schram and W. Tsai and G. Groeseneken and Kristin De Meyer and Stefan De Gendt and M H Heyns},
  journal={Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.},
  year={2005},
  pages={234-235}
}
We demonstrate high-performing w-channel transistors with a HfO/sub 2//TaN gate stack and a low thermal budget process (570/spl deg/C anneal). The thinnest devices have an EOT of 8.3 A, a leakage current of 2.6 A/cm/sup 2/ at V/sub G/=1 V, and a drive-current of 815 /spl mu/A/um at an off-state current of 0.1 /spl mu/A//spl mu/m for VDD=1.2 V. We show that the performance improvement over identical gate-stacks processed with a 1000/spl deg/C spike anneal is related to a difference in V/sub T/. 
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