High performance triangular barrier engineered NIPIN selector for bipolar RRAM

@article{Meshram2014HighPT,
  title={High performance triangular barrier engineered NIPIN selector for bipolar RRAM},
  author={Rahul Meshram and Bipul Das and Raju Mandapati and Sandip Lashkare and Shantanu Deshmukh and Saurabh Lodha and Udayan Ganguly and J{\"o}rg Schulze},
  journal={2014 IEEE 6th International Memory Workshop (IMW)},
  year={2014},
  pages={1-4}
}
Triangular barrier has been proposed and implemented for the first time in a punch-through diode based selector by dopant profile engineering. Vertical 4F2 diodes have been fabricated on an epitaxial Si stack consists of n+ / i / delta-doped p+ / i / n+ (NIPIN) layers by low temperature (sub-520°C) Si epitaxy. We experimentally demonstrate that while conventional NPN selectors exhibit severe sub-threshold slope degradation at high voltage, NIPIN selectors produce ideal subthreshold slope of… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 17 REFERENCES

Punch-through-Diode-Based Bipolar RRAM Selector by Si Epitaxy

  • V.S.S. Srinivasan
  • v. 33,
  • 2012
Highly Influential
4 Excerpts

The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

  • R. Mandapati
  • IEEE Transactions on Electron Device,
  • 2013
1 Excerpt

Ultrathin(<10 nm) Nb2O5 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

  • S. Kim
  • Proc. Symp. VLSI Technol., pp. 155–156, .
  • 2012

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