High-performance single layered WSe₂ p-FETs with chemically doped contacts.

@article{Fang2012HighperformanceSL,
  title={High-performance single layered WSe₂ p-FETs with chemically doped contacts.},
  author={Hui Fang and Steven Chuang and Ting Chia Chang and Kuniharu Takei and Toshitake Takahashi and Ali Javey},
  journal={Nano letters},
  year={2012},
  volume={12 7},
  pages={
          3788-92
        }
}
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work… 

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