High-performance single layered WSe₂ p-FETs with chemically doped contacts.

@article{Fang2012HighperformanceSL,
  title={High-performance single layered WSe₂ p-FETs with chemically doped contacts.},
  author={Hui Fang and Steven Chuang and Ting Chia Chang and Kuniharu Takei and Toshitake Takahashi and Ali Javey},
  journal={Nano letters},
  year={2012},
  volume={12 7},
  pages={
          3788-92
        }
}
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work… 
View on PubMed
arxiv.org
1,372 Citations
Highly Influential Citations
19
Background Citations
124
Methods Citations
21
Results Citations
4

Figures from this paper

1,372 Citations

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications
WSe2 is thought to be one of the best emerging p-type transition metal dichalcogenide (TMD) materials for potential low-power complementary metal oxide semiconductor (CMOS) circuit applications.…
High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.
TLDR
The fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts is reported, indicating the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible, and transparent low-resistance ohmic contacts to a wide range of quasi-2D semiconductors.
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.
TLDR
Dual-gated p-type field-effect transistors based on few-layer tungsten diselenide (WSe2) based on high work-function platinum source/drain contacts and a hexagonal boron nitride top-gate dielectric are demonstrated.
Field-effect transistors built from all two-dimensional material components.
TLDR
In this work, all interfaces are based on van der Waals bonding, presenting a unique device architecture where crystalline, layered materials with atomically uniform thicknesses are stacked on demand, without the lattice parameter constraints, demonstrating the promise of using an all-layered material system for future electronic applications.
Electrical transport properties of single-layer WS2.
We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the…
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
TLDR
It is shown that substoichiometric molybdenum trioxide (MoOx, x < 3), a high work function material, acts as an efficient hole injection layer to MoS2 and WSe2 and will enable future exploration of their performance limits and intrinsic transport properties.
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
Most of the reported field effect transistors (FETs) in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are based on the high power consumption Schottky FETs, in which the…
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with…
Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
TLDR
The origin of transport limitations of local-gated BP FETs are demonstrated by comparing the transport properties of hexagonal boron nitride (h-BN)-based device architectures with those of a bottom-gations of a Si/SiO2 substrate by using h-BN as passivation and dielectric layers.
Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.
TLDR
The design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayers WSe2 corroborates the superb potential of WSe 2 for complementary digital logic applications.
...
...

References

SHOWING 1-10 OF 34 REFERENCES
Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.
TLDR
This work reports the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses, and presents an important advance in the field ofIII-V electronics.
Single-layer MoS2 transistors.
TLDR
Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
High-mobility field-effect transistors based on transition metal dichalcogenides
We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables…
Semiconducting Properties of Single Crystals of n‐ and p‐Type Tungsten Diselenide (WSe2)
The optical absorption, photoconductivity, contact photovoltage, electrical conductivity, and Hall coefficient of single crystals of WSe2 have been studied over the temperature range 77°–295°K. It…
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
TLDR
A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
n-MoSe2/p-WSe2 heterojunctions
The preparation of n‐MoSe2/p‐WSe2 heterojunctions by epitaxial growth of WSe2 (Eg=1.16 eV) on MoSe2 (Eg=1.06 eV) substrates is reported. The two semiconductors are nearly lattice matched along their…
Surface transfer p-type doping of epitaxial graphene.
TLDR
Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene.
Molecular doping of graphene.
TLDR
This letter presents the first joint experimental and theoretical investigation of adsorbate-induced doping of graphene, and shows that this peculiar density of states (DOS) of graphene is ideal for "chemical sensor" applications and explains the recently observed NO2 single molecule detection.
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the…
Graphene nanoribbons with smooth edges behave as quantum wires.
TLDR
It is reported that one- and two-layer nanoribbon quantum dots made by unzipping carbon nanotubes exhibit well-defined quantum transport phenomena, including Coulomb blockade, the Kondo effect, clear excited states up to ∼20 meV, and inelastic co-tunnelling.
...
...