High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

@article{Kuo2006HighperformancePT,
  title={High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure},
  author={Po-Yi Kuo and Tien-Sheng Chao and Ren-Jie Wang and Tan-Fu Lei},
  journal={IEEE Electron Device Letters},
  year={2006},
  volume={27},
  pages={258-261}
}
In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold… CONTINUE READING