High-performance pentacene field-effect transistors using Al 2 O 3 gate dielectrics prepared by atomic layer deposition ( ALD )

@inproceedings{Zhang2007HighperformancePF,
  title={High-performance pentacene field-effect transistors using Al 2 O 3 gate dielectrics prepared by atomic layer deposition ( ALD )},
  author={Xiaohong Zhang and Beno{\^i}t Domercq and Xudong Wang and Seunghyup Yoo and Takeshi Kondo and Zhong Lin Wang and Bernard Kippelen},
  year={2007}
}
High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 ± 0.2 cm/V s and 0.9 ± 0.1 cm/V s were obtained when using heavily n-doped silicon (n-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-on voltage and exhibited a low threshold voltage (< 10 V) as well as a low sub-threshold slope (<1 V… CONTINUE READING

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