High-performance p-type independent-gate FinFETs

@article{Fried2004HighperformancePI,
  title={High-performance p-type independent-gate FinFETs},
  author={D. M. Fried and J. Duster and K. Kornegay},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={199-201}
}
We present, to our knowledge, the first successful integration of two independent gates on a p-type FinFET. These results also represent a significant performance improvement over previously reported Independent-Gate FinFET results. The devices have gate lengths ranging from 0.5 to 5 /spl mu/m, and designed fin thicknesses ranging from 25 to 75 nm. Electrical results show near-ideal subthreshold slopes in double-gate mode (both gates modulated simultaneously). Independent-Gate operation is also… CONTINUE READING
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