High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

@article{Javey2005HighPN,
  title={High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.},
  author={Ali Javey and Ryan Tu and Damon B. Farmer and Jing Guo and Roy G. Gordon and Hongjie Dai},
  journal={Nano letters},
  year={2005},
  volume={5 2},
  pages={345-8}
}
Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained. For nanotubes with diameter approximately 1.6 nm and band gap approximately 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction… CONTINUE READING
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