High performance multi-gate pMOSFET using uniaxially-strained SGOI channels

@article{Irisawa2005HighPM,
  title={High performance multi-gate pMOSFET using uniaxially-strained SGOI channels},
  author={Toshifumi Irisawa and Toshinori Numata and Tsutomu Tezuka and Koji Usuda and Shu Nakaharai and N. Hirashita and Naoyuki Sugiyama and Eri Toyoda and S.-i. Takagi},
  journal={IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.},
  year={2005},
  pages={709-712}
}
We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated 

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