High performance millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias

Abstract

Millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias and end source vias have been fabricated and characterized. Although DC IV characteristics of the HEMTs with individually grounded source finger vias and end source vias were similar, RF measurements yielded higher small signal gain on the HEMT with individually grounded… (More)

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