High performance bulk planar 20nm CMOS technology for low power mobile applications

  title={High performance bulk planar 20nm CMOS technology for low power mobile applications},
  author={Huiling Shang and Sameer Jain and E. Josse and Emre Alptekin and Mi Hae Nam and Sunyoung Kim and K. H. Cho and In Ryoung Kim and Yang Liu and Xingyu Yang and Xiaowen Wu and J. Ciavatti and N. S. Kim and Reinaldo A. Vega and L. Kang and H. V. Meer and S. Samavedam and M{\"u}cahit Çelik and S. Soss and H. K. Utomo and Ramya Ramachandran and W. L. Lai and Vishal Sardesai and Cung Tran and J Y Kim and Youngkwan Park and W. L. Tan and Tetsuya Shimizu and Roby Joy and Jay W. Strane and K. Tabakman and Frederic Lalanne and Pietro Montanini and Katherina Babich and Jonghae Kim and Laertis Economikos and Wayne Cote and Chandrasekhar Reddy and Michael Belyansky and Raina Arndt and Unoh Kwon and K. Wong and Deepak Koli and D. Levedakis and J. W. Lee and Jennifer Muncy and S. A. Krishnan and D. Schepis and X. Chen and Byeong Kim and C. E. Tian and B. P. Linder and Eduard A. Cartier and V. Narayanan and G. Northrop and O. Menut and Joseph Meiring and Alan Thomas and Massud Aminpur and S H Park and Kyupil Lee and B-Y. Kim and S-H. Rhee and B. Hamieh and Rupal Srivastava and Rojison Koshy and Carolyn G Goldberg and M. Pallachalil and Miyoung Chae and Asako Ogino and Takamoto Watanabe and M. Oh and H. Mallela and D. Codi and Pierre Malinge and M. E. Weybright and R. Mann and A. P. Mittal and Mo Xiao Eller and Sean Lian and You Qin Li and Rama Divakaruni and S. Bukofsky and J. D. Kim and J. L. Sudijono and W. Neumueller and Fumitomo Matsuoka and Richard Sampson},
  journal={2012 Symposium on VLSI Technology (VLSIT)},
In this paper, we present a high performance planar 20nm CMOS bulk technology for low power mobile (LPM) computing applications featuring an advanced high-k metal gate (HKMG) process, strain engineering, 64nm metal pitch & ULK dielectrics. Compared with 28nm low power technology, it offers 0.55X density scaling and enables significant frequency improvement at lower standby power. Device drive current up to 2X 28nm at equivalent leakage is achieved through co-optimization of HKMG process and… CONTINUE READING
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