High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

@article{Bangsaruntip2009HighPA,
  title={High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling},
  author={Sarunya Bangsaruntip and G. M. Cohen and Amlan Majumdar and Ying Zhang and S. U. Engelmann and N. C. M. Fuller and L. Gignac and Shawet Mittal and J. S. Newbury and Michael Guillorn and Tymon Barwicz and Lidija Sekaric and M. M. Frank and J. W. Sleight},
  journal={2009 IEEE International Electron Devices Meeting (IEDM)},
  year={2009},
  pages={1-4}
}
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I<inf>DSAT</inf> = 825/950 µA/µm (circumference-normalized) or 2592/2985 µA/µm (diameter-normalized) at supply voltage V<inf>DD</inf> = 1 V and off-current I<inf>OFF</inf> = 15 nA/µm. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation… CONTINUE READING
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