High-performance air-stable ambipolar organic field-effect transistor based on tris(phthalocyaninato) europium(III).

Abstract

A novel sandwich-type tris(phthalocyaninato) europium triple-decker complex bearing peripheral electron-withdrawing groups (see center of figure) is used to fabricate a field-effect transistor by the quasi-Langmuir-Schaefer method. The air-stable, single-component ambipolar OFET device displays the best carrier properties of a device fabricated by solution processing of a single phthalocyanine derivative so far, which makes the complex very promising for applications in nanoelectronics.

DOI: 10.1002/adma.201200006

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Cite this paper

@article{Kan2012HighperformanceAA, title={High-performance air-stable ambipolar organic field-effect transistor based on tris(phthalocyaninato) europium(III).}, author={Jinglan Kan and Yanli Chen and Dongdong Qi and Yunqi Liu and Jianzhuang Jiang}, journal={Advanced materials}, year={2012}, volume={24 13}, pages={1755-8} }