High-performance W-band SiGe RFICs for passive millimeter-wave imaging

@article{May2009HighperformanceWS,
  title={High-performance W-band SiGe RFICs for passive millimeter-wave imaging},
  author={Jason W. May and Gabriel M. Rebeiz},
  journal={2009 IEEE Radio Frequency Integrated Circuits Symposium},
  year={2009},
  pages={437-440}
}
A W-band square-law detector was implemented in a commercial SiGe 0.12µm BiCMOS process (IBM8HP, f<inf>t</inf> = 200 GHz) and was integrated with a SiGe LNA and SPDT switch. The combined LNA+Detector is 0.26 mm<sup>2</sup>, achieves a peak responsivity of µ4 MV/W at 94 GHz with a minimum NEP ≪ 0.02 pW/Hz<sup>1/2</sup>, and consumes 29 mA from a 1.2 V supply. A low-loss W-band SPDT is also integrated on some designs for an internal 50 ∼ reference. The chip can achieve a temperature resolution of… CONTINUE READING
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