High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.


We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of… (More)
DOI: 10.1039/c3nr06690h