High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology

@article{Cho2000HighPS,
  title={High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology},
  author={Myung Kwan Cho and D. M. Kim},
  journal={IEEE Electron Device Letters},
  year={2000},
  volume={21},
  pages={399-401}
}
Nonvolatile SONOS memory cells, fabricated by standard flash EEPROM technology are characterized, in comparison with floating gate memory devices. Its programming speed is comparable with the state-of-the-art flash EEPROM cells, while the erase speed is faster and over-erase-free. The SONOS cells do not suffer from the drain turn-on effect, making it is possible to perform parallel multi bit-line programming and to achieve tighter distributions of programmed and erased threshold voltages. These… CONTINUE READING
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