High-performance InAs Õ GaSb superlattice photodiodes for the very long wavelength infrared range

@inproceedings{Mohseni2001HighperformanceI,
  title={High-performance InAs {\~O} GaSb superlattice photodiodes for the very long wavelength infrared range},
  author={Hooman Mohseni and M. Razeghia},
  year={2001}
}
We report on the demonstration of high-performance pi -n photodiodes based on type-II InAs/ GaSb superlattices with 50% cut-off wavelength lc516 mm operating at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and atomic force microscopy. The processed devices show a current responsivity of 3.5 A/W at 80 K leading to a detectivity of ;1.51310 cmHz/W. The quantum efficiency of these devices is about 35% which is… CONTINUE READING