High-performance III–V devices for future logic applications

@article{Kim2014HighperformanceID,
  title={High-performance III–V devices for future logic applications},
  author={D-H Kim and T-W Kim and Rh Baek and P. D. Kirsch and W. P. Maszara and J. A. del Alamo and D. A. Antoniadis and Miguel Urteaga and Berinder Brar and Hm Kwon and C-S Shin and W-K Park and Y. M. Cho and Sh Shin and Dh Ko and K-S Seo},
  journal={2014 IEEE International Electron Devices Meeting},
  year={2014},
  pages={25.2.1-25.2.4}
}
High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits. 

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