High performance Fin-FET electrochemical sensor with high-k dielectric materials

@article{Rollo2019HighPF,
  title={High performance Fin-FET electrochemical sensor with high-k dielectric materials},
  author={Serena Rollo and Dipti Rani and Wouter Olthuis and C{\'e}sar Pascual Garc{\'i}a},
  journal={Sensors and Actuators B: Chemical},
  year={2019}
}

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References

SHOWING 1-10 OF 46 REFERENCES

Improved pH Sensitivity and Reliability for Extended Gate Field-Effect Transistor Sensors Using High-k Sensing Membranes.

DG FET configurations using Ta₂O5 films as EG sensing membranes are expected to be useful for high performance biosensor applications, as they satisfy the requirements for sensitivity, stability and reliability.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

This work proposes pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates, and provides an analytical insight of the concept of sensitivity for the electronic integration of sensors.

High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing.

A Fin-Field Effect Transistor (FinFET) with a high height to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time is proposed.

Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.

The pH responses of the ISFETs with different pH solutions were characterized at room temperature which showed a clear lateral shift of the drain current vs. gate voltage curve with a change in the pH value of the solution and a sensitivity of 40 mV pH(-1).

High performance of silicon nanowire-based biosensors using a high-k stacked sensing thin film.

Compared with the conventional single SiO2 thin film, the staked OHA thin films demonstrated improved sensing performances; a higher sensitivity, a lower hysteresis voltage, and a smaller drift rate, as well as a higher output current.

On the Use of Scalable NanoISFET Arrays of Silicon with Highly Reproducible Sensor Performance for Biosensor Applications

Demonstration of a high-density sensor platform with uniform characteristics such as nanoISFET arrays of silicon (Si) in a routine and refined nanofabrication process may serve as an ideal solution deployable for real assay-based applications.

Top-down fabricated silicon nanowire sensors for real-time chemical detection

Silicon nanowire sensors developed by using top-down fabrication that is CMOS (complementary metal-oxide-semiconductor) compatible for resistive chemical detection with fast response and high sensitivity for pH detection and the long term drifting effects were investigated.

Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors.

This study uses silicon nanowires coated with highly pH-sensitive hafnium oxide and aluminum oxide to determine their response to variations in KCl concentration at several constant pH values and observes a nonlinear sensor response as a function of ionic strength, which is independent of the pH value.

High-k dielectrics for use as ISFET gate oxides

Two binary oxides, Ta/sub 2/O/sub 5/ and HfO/sub 2/, were investigated for use as the pH-sensitive gate oxide of ion-sensitive field-effect transistors (ISFETs). Both materials have been extensively