High-performance AlGaAs/GaAs MODFET'S with improved ohmic contacts

@article{Jones1986HighperformanceAM,
  title={High-performance AlGaAs/GaAs MODFET'S with improved ohmic contacts},
  author={W. Jones and L E Eastman},
  journal={IEEE Transactions on Electron Devices},
  year={1986},
  volume={33},
  pages={712-716}
}
Alloyed ohmic contacts based on AuGeNiAg metallization with transfer resistance from ohmic metal to the 2DEG channel of less than 0.1 Ω mm have been fabricated on AlGaAs/GaAs MODFET layer structures. A sequential alloy technique was used to determine an optimum thermal alloy cycle for use on high-speed logic MODFET device layers. The resulting smooth surface morphology and extremely straight edges facilitate easy realignment for an all direct-write electron-beam lithographic process. Using… CONTINUE READING

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