High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

  title={High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire},
  author={V. Kumar and W. Lu and F. A. Khan and R G Schwindt and A. Kuliev and J. Yang and A. A. Khan and Ilesanmi Adesida},
  journal={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)},
Using ICP-RIE, recessed 0.15 /spl mu/m gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 0.15 /spl mu/m gate-length devices exhibited maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance. of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz. The f/sub T/ of 107 GHz is the highest reported value for similar gate-length GaN-based HEMTs. 
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