High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

@article{Kumar2001HighP0,
  title={High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire},
  author={V. Kumar and W. Lu and F. A. Khan and R G Schwindt and A. Kuliev and J. Yang and A. A. Khan and Ilesanmi Adesida},
  journal={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)},
  year={2001},
  pages={25.1.1-25.1.4}
}
Using ICP-RIE, recessed 0.15 /spl mu/m gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 0.15 /spl mu/m gate-length devices exhibited maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance. of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz. The f/sub T/ of 107 GHz is the highest reported value for similar gate-length GaN-based HEMTs. 
5 Citations
4 References
Similar Papers

References

Publications referenced by this paper.
Showing 1-4 of 4 references

GaN/AIGaN high electron mobility transistors with fT of 110 GHz,

  • M. Micovic, N. X. Nguyen, +4 authors C. Nguyen
  • Electron Lett.,
  • 2000

Characterizations of Recessed Gate AIGaN/GaN HEMTs on Sapphire,

  • T. Egawa, G. Zhao, H. lshikawa, M.Umeno, T. Jimbo
  • IEEE Trans. Electron Devices,
  • 1997

High power microwave GaN / AIGaN HEMTs on silicon carbide

  • W. S. Wong
  • IEEE Electron Device Lett .

Similar Papers

Loading similar papers…