• DOI:10.1109/IEDM.2012.6479070
• Corpus ID: 33864455

High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os

@article{Sunamura2012HighOP,
  title={High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os},
  author={Hiroshi Sunamura and Kishou Kaneko and N. Furutake and Shinobu Saito and M. Narihiro and Nobuyuki Ikarashi and Masami Hane and Yoshihiro Hayashi},
  journal={2012 International Electron Devices Meeting},
  year={2012},
  pages={18.8.1-18.8.3}
}

• H. Sunamura, K. Kaneko, +5 authors Y. Hayashi
• Published 1 December 2012
• Engineering
• 2012 International Electron Devices Meeting

A new P-type amorphous SnO thin-film transistor with high I_on/I_off ratio of >10⁴ is developed, for the first time, as a component to complement N-type IGZO transistors for on-chip voltage-bridging BEOL-CMOS I/Os on conventional Si-LSI Cu-interconnects (Fig. 1). Dedicated low-temperature (<;400°C) oxide-semiconductor processes are implemented to overcome several integration challenges (Fig. 2) with only one-mask addition using standard BEOL process tools (Fig. 3). We demonstrate high I_on/I_off ratio of >10⁴ and high-V_d capability (|V_bd|>40V) with gate-to-drain offset structure, showing superior properties over the previously reported values (Table 1). The SnO transistor is suited for the BEOL-CMOS I/O, which gives standard LSIs a special add-on function to control high voltage signals directly in smart society applications.