High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os

@article{Sunamura2012HighOP,
  title={High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os},
  author={H. Sunamura and K. Kaneko and N. Furutake and S. Saito and M. Narihiro and N. Ikarashi and M. Hane and Y. Hayashi},
  journal={2012 International Electron Devices Meeting},
  year={2012},
  pages={18.8.1-18.8.3}
}
A new P-type amorphous SnO thin-film transistor with high I<sub>on</sub>/I<sub>off</sub> ratio of >10<sup>4</sup> is developed, for the first time, as a component to complement N-type IGZO transistors for on-chip voltage-bridging BEOL-CMOS I/Os on conventional Si-LSI Cu-interconnects (Fig. 1). Dedicated low-temperature (<;400°C) oxide-semiconductor processes are implemented to overcome several integration challenges (Fig. 2) with only one-mask addition using standard BEOL process tools (Fig. 3… Expand

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