High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os
@article{Sunamura2012HighOP, title={High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os}, author={Hiroshi Sunamura and Kishou Kaneko and N. Furutake and Shinobu Saito and M. Narihiro and Nobuyuki Ikarashi and Masami Hane and Yoshihiro Hayashi}, journal={2012 International Electron Devices Meeting}, year={2012}, pages={18.8.1-18.8.3} }
A new P-type amorphous SnO thin-film transistor with high I<sub>on</sub>/I<sub>off</sub> ratio of >10<sup>4</sup> is developed, for the first time, as a component to complement N-type IGZO transistors for on-chip voltage-bridging BEOL-CMOS I/Os on conventional Si-LSI Cu-interconnects (Fig. 1). Dedicated low-temperature (<;400°C) oxide-semiconductor processes are implemented to overcome several integration challenges (Fig. 2) with only one-mask addition using standard BEOL process tools (Fig. 3…
9 Citations
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- Materials Science2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
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High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline…
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