High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os

@article{Sunamura2012HighOP,
  title={High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os},
  author={Hiroshi Sunamura and Kishou Kaneko and N. Furutake and Shinobu Saito and M. Narihiro and Nobuyuki Ikarashi and Masami Hane and Yoshihiro Hayashi},
  journal={2012 International Electron Devices Meeting},
  year={2012},
  pages={18.8.1-18.8.3}
}
A new P-type amorphous SnO thin-film transistor with high I<sub>on</sub>/I<sub>off</sub> ratio of >10<sup>4</sup> is developed, for the first time, as a component to complement N-type IGZO transistors for on-chip voltage-bridging BEOL-CMOS I/Os on conventional Si-LSI Cu-interconnects (Fig. 1). Dedicated low-temperature (<;400°C) oxide-semiconductor processes are implemented to overcome several integration challenges (Fig. 2) with only one-mask addition using standard BEOL process tools (Fig. 3… 

Figures from this paper

High-Voltage Amorphous InGaZnO TFT With Al2O3 High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration
On-chip high-voltage (HV) power management integrated circuits would deliver smaller form factor, lower system cost, higher power efficiency, and suppressed noise in system-on-chip designs. A
Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method
We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of <inline-formula> <tex-math notation="LaTeX">$0.2~\mu \text{m}$
Device Characterization and Design Guideline of Amorphous InGaZnO Junctionless Thin-Film Transistor
Amorphous InGaZnO junctionless thin-film transistors (a-IGZO JL-TFTs) with different active layer thicknesses and thermal treatments were fabricated. The unique feature of a-IGZO JL-TFTs is that all
Stability of High Performance p-type SnO TFTs
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline
Stability of High performance p-type SnO TFTs
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline
Past and Future Technology for Mixed Signal LSI
TLDR
The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material and is one future device which enables 3D IC and chip shrinking technology.
Evaluation of Ga-Sn-O films fabricated using mist chemical vapor deposition
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature

References

SHOWING 1-3 OF 3 REFERENCES
Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits
Thin film transistors (TFTs) using polycrystalline tin oxides (SnO–SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed
Thin-film transistors based on p-type Cu2O thin films produced at room temperature
Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the
Characterization of tin oxides by x-ray-photoemission spectroscopy.
TLDR
This work focuses on the way the two tin oxides could be distinguished using x-ray-photoemission spectroscopy (XPS), and proposes a procedure for the quantitative evaluation, by XPS, of the relative concentration of the two oxides.