High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.

@article{Kim2012HighmobilityAL,
  title={High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.},
  author={Sunkook Kim and Aniruddha Konar and Wan-Sik Hwang and Jong Hak Lee and Jiyoul Lee and Jaehyun Yang and Changhoon Jung and Hyoungsub Kim and J. B. Yoo and J. Choi and Yong Wan Jin and Sang Yoon Lee and Debdeep Jena and Woong Choi and Kinam Kim},
  journal={Nature communications},
  year={2012},
  volume={3},
  pages={1011}
}
Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication… CONTINUE READING
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