High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.

Abstract

Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single… (More)
DOI: 10.1038/ncomms2018

Topics

4 Figures and Tables

Statistics

02040602012201320142015201620172018
Citations per Year

221 Citations

Semantic Scholar estimates that this publication has 221 citations based on the available data.

See our FAQ for additional information.

Cite this paper

@article{Kim2012HighmobilityAL, title={High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.}, author={Sunkook Kim and Aniruddha Konar and W. Hwang and Jong Hak Lee and Jiyoul Lee and Jaehyun Yang and Changhoon Jung and Hyoungsub Kim and Ji-Beom Yoo and Jae-Young Choi and Yong Wan Jin and Sang Yoon Lee and Debdeep Jena and Woong Choi and Kinam Kim}, journal={Nature communications}, year={2012}, volume={3}, pages={1011} }