High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.


Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single… (More)
DOI: 10.1038/ncomms2018


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@article{Kim2012HighmobilityAL, title={High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.}, author={Sunkook Kim and Aniruddha Konar and W. Hwang and Jong Hak Lee and Jiyoul Lee and Jaehyun Yang and Changhoon Jung and Hyoungsub Kim and Ji-Beom Yoo and Jae-Young Choi and Yong Wan Jin and Sang Yoon Lee and Debdeep Jena and Woong Choi and Kinam Kim}, journal={Nature communications}, year={2012}, volume={3}, pages={1011} }