High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

  title={High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains},
  author={Wei Wu and Debtanu De and Sungjin Chang and Yanan Wang and Haibing Peng and Jiming Bao and Shin-shem Pei},
  journal={Applied Physics Letters},
We report the electrical characteristics of field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the field-effect mobility is ∼17 cm2 V−1 s−1 and the on/off current ratio is ∼108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality… 

Figures from this paper

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors
We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2
Transport properties of monolayer MoS2 grown by chemical vapor deposition.
This work investigates the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2 and shows that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures.
Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics
Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to
Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high
Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor
  • S. Mallik, Sandhyarani Sahoo, +4 authors Satyaprakash Sahoo
  • Materials Science
  • 2021
Atomically thin layered materials such as MoS2 have future versatile applications in low power electronics. Here, we demonstrate the growth of a salt-assisted large scale, high-quality monolayer MoS2
Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
A new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD for low power operation is reported.
Growth of large-scale and thickness-modulated MoS₂ nanosheets.
The results show that sputter-CVD is a viable method to synthesize large-area, high-quality, and layer-controlled MoS2 that can be adapted in conventional Si-based microfabrication technology and future flexible,high-temperature, and radiation hard electronics/optoelectronics.
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts as well as positive gate voltage shows the tunability of FET characteristics.
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
We demonstrate monolayer (1L) MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up


Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2,
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates.
It is reported that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates.
Single-layer MoS2 transistors.
Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes.
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a
Present status of amorphous In–Ga–Zn–O thin-film transistors
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization.
Spectroscopic, optical and electrical characterizations reveal that the obtained wafer-scale MoS(2) thin layers are polycrystalline and with semiconductor properties, which make such films suitable for flexible electronics or optoelectronics.
Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.
The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.
Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.
The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride.