High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

@article{Wu2013HighMA,
  title={High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains},
  author={Wei Wu and Debtanu De and Sungjin Chang and Yanan Wang and Haibing Peng and Jiming Bao and Shin-shem Pei},
  journal={Applied Physics Letters},
  year={2013},
  volume={102},
  pages={142106}
}
We report the electrical characteristics of field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the field-effect mobility is ∼17 cm2 V−1 s−1 and the on/off current ratio is ∼108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality… 

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References

SHOWING 1-10 OF 30 REFERENCES
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2,
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
TLDR
This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates.
TLDR
It is reported that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates.
Single-layer MoS2 transistors.
TLDR
Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes.
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a
Present status of amorphous In–Ga–Zn–O thin-film transistors
TLDR
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization.
TLDR
Spectroscopic, optical and electrical characterizations reveal that the obtained wafer-scale MoS(2) thin layers are polycrystalline and with semiconductor properties, which make such films suitable for flexible electronics or optoelectronics.
Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.
TLDR
The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.
Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.
TLDR
The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride.
...
1
2
3
...