High mobility In 0 . 53 Ga 0 . 47 As quantum-well metal oxide semiconductor field effect transistor structures

@inproceedings{Yang2013HighMI,
  title={High mobility In 0 . 53 Ga 0 . 47 As quantum-well metal oxide semiconductor field effect transistor structures},
  author={Lei Yang and Cheng-Wei Cheng and Mayank T. Bulsara and Eugene A. Fitzgerald},
  year={2013}
}
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