High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronics

@article{Hong2016Highmobility2L,
  title={High-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronics},
  author={Seongin Hong and Seung Min Kim and Won Geun Song and Youngki Hong and Sunkook Kim},
  journal={2016 IEEE Silicon Nanoelectronics Workshop (SNW)},
  year={2016},
  pages={56-57}
}
Layered semiconductor materials of molecular thickness, in particular transition metal dichacholgenides (TMDs), possess desirable characteristics including the existence of bandgap, low-power switching behavior, and high carrier mobility that afford them promising as active components of future high speed and low-power electronics. Reliable large-volume… CONTINUE READING