High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control

@article{Hua2005HighlinearityAT,
  title={High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control},
  author={Wei-Chun Hua and Hung-Hui Lai and Po-Tsung Lin and Chee Wee Liu and Tzu-Yi Yang and G. Ma},
  journal={2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers},
  year={2005},
  pages={609-612}
}
A high-linearity and temperature-insensitive 2.4 GHz power amplifier (PA) with dynamic-bias control is realized in a SiGe HBT technology with 0.9 /spl mu/m emitter width. Due to the bias linearization, the P/sub 1dB/ of 27 dBm is only 0.5 dB lower than P/sub sat/, which is the record low to the best of our knowledge. With simple temperature-insensitive bias, the total current deviations from the room temperature values are smaller than 6% and 10% at the linear P/sub out/ (24/20 dBm) for 802.11b… CONTINUE READING
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