Atomic Layer Deposition (ALD) has become a popular thin film deposition technique due to atomic level thickness control and reproducibility. Recent literature has reported different types of charges that arise at SiO2/high-k interface which can substantially affect device performance. In this study, we characterized the charge densities for films deposited by CV studies for Savannah ALD. We developed a robust process flow and utilized standard analysis techniques following an extensive literature study. Interface dipole effects were observed and Interface charge densities were extracted for HfO2, Al2O3 high-k materials under different forming gas anneal (FGA) conditions. In addition, our methodology can be used as a basis/standard for future cross contamination studies.