High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors.

@article{Lill2019HighkFG,
  title={High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors.},
  author={Alexander T Lill and Ala’a F. Eftaiha and Jianfei Huang and Hao Yang and Martin Seifrid and Ming Wang and Guillermo C. Bazan and Thuc‐Quyen Nguyen},
  journal={ACS applied materials \& interfaces},
  year={2019},
  volume={11 17},
  pages={
          15821-15828
        }
}
A detailed study of a high-k fluoropolymer gate dielectric material, poly(vinylidene fluoride- co-hexafluoropropylene) [P(VDF-HFP)], is presented as a guide to achieve low operational voltage and electrically stable device performance. The large dipole moment of C-F dipoles in P(VDF-HFP) is responsible for its high dielectric constant as well as its potentially ferroelectric behavior that must be minimized to avoid hysteretic current-voltage characteristics. A range of material grades and… 
View on PubMed
mc-cam.ucsb.edu
18 Citations

Figures and Tables from this paper

18 Citations

Citation Type

Citation Type

High-k Fluoropolymers Dielectrics for Low-Bias Ambipolar Organic Light Emitting Transistors (OLETs).
TLDR
This work demonstrates how engineering the dielectric layer based on high-k polyvinylidene fluoride (PVDF)-based polymers can lead to a drastic reduction of device driving voltages and the improvement of its optoelectronic properties, thus enabling flexible low-bias organic electronic devices.
Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors
TLDR
The results will guide appropriate solvent selection and contribute to the improvement of flexible Fe-FET electrical properties and mechanical stability in the next generation of memory devices.
Low-Voltage Operated Organic Thin-Film Transistors With Mobility Exceeding 10 cm²/vs
In this letter, low-voltage operation and high mobility are simultaneously achieved in the OTFTs based on an elaborately constructed tri-layer gate dielectric. The tri-layer gate dielectric consists…
Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits
TLDR
Using a typical poly(amic acid) precursor-based solution synthesized through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI, the deposited PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors.
Polymeric Conformation of Organic Interlayers as a Determining Parameter for the Charge Transport of Organic Field-Effect Transistors
Here, we systematically investigated the effects of different carbon numbers or alkyl chain lengths of organic SAM interlayers on electrical properties of poly…
Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature.
TLDR
A near room temperature ultraviolet densification methodology for realizing high-performance organic-inorganic zirconia self-assembled nanodielectrics (UVD-ZrSANDs) that rival or exceed those synthesized by traditional thermal methods.
Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation
In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high…
Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
TLDR
This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.
On the recombination order of surface recombination under open circuit conditions
Significantly enhanced high permittivity and negative permittivity in Ag/Al2O3/3D-BaTiO3/epoxy metacomposites with unique hierarchical heterogeneous microstructures
...
1
2
...

References

SHOWING 1-10 OF 45 REFERENCES
High-performance solution-processed polymer ferroelectric field-effect transistors
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a…
Influence of Dielectric Layers on Charge Transport through Diketopyrrolopyrrole-Containing Polymer Films: Dielectric Polarizability vs Capacitance.
TLDR
The beneficial influence of attaining more carriers in the PDPPTPT films on their charge transport properties was consistently observed from all three systems; however, the more dominant factor determining the large carrier mobility was the low polarizability of the gate dielectric rather than its large capacitance.
High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors
Using a thermal-crosslinkable siloxane bisbenzocyclobutene, high quality spin-on (solutionprocessable) gate dielectric layers as thin as 50 nm have been fabricated over the semiconductor layer for…
Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.
TLDR
A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant between 8 and 11 is demonstrated in thin-film transistors, leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.
Physics of organic ferroelectric field-effect transistors
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are…
Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect Transistors
In this paper, we present a new effect influencing the operation of organic field-effect transistors resulting from the choice of gate insulator material. In a series of studies it was found that the…
Air Stable Cross-Linked Cytop Ultrathin Gate Dielectric for High Yield Low-Voltage Top-Gate Organic Field-Effect Transistors
We demonstrate the use of a cross-linking chemistry for an amorphous fluoropolymer gate dielectric, poly(perfluorobutenylvinylether) commercially known as Cytop. Spin-coated films of Cytop exhibit…
Tunable Fröhlich polarons in organic single-crystal transistors
TLDR
This work has studied transport through organic single-crystal FETs with different gate insulators and finds that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing dielectric constant of the insulator.
Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate insulator.
TLDR
It is notable that many high-mobility and solution-processable conjugated polymers have not been used in low-voltage field effect transistors with expected mobilities because of the lack of suitable gate dielectrics.[19] Ideal gate dieLECTric materials for OTFTs should be solution processable at low temperature, flexible, and suitable for different device structures, such as bottom-gate and top-gate devices.
Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors
TLDR
Different from previously reported OFETs with double-layer capacitance effects, these devices showed unprecedented high bias-stress stability in air and even in water.
...
1
2
3
4
5
...