High-gain 60-GHz on-chip PIFA using IPD technology

Abstract

A first high-gain 60-GHz PIFA implemented with a silicon substrate Integrated Passive Device (IPD) technology is presented in the paper. The PIFA which was used with L-shape ground structure could change the radiation pattern and enhance the antenna gain. Simulation and measurement regarding antenna reflection coefficient are conducted for design validation… (More)

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Cite this paper

@article{Lin2016Highgain6O, title={High-gain 60-GHz on-chip PIFA using IPD technology}, author={Ta-Yeh Lin and Tsenchieh Chiu and Yin-Cheng Chang and Chaoping Hsieh and Da-Chiang Chang}, journal={2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)}, year={2016}, pages={1-3} }