High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications

The dv/dt switching limitations of power semiconductor devices in a boost DC-DC power converter are evaluated using circuit simulations and accurate circuit simulation models. State-of-the-art commercial silicon CoolMOS devices, commercial Silicon Carbide (SiC) power Schottky Barrier Diodes (SBD's), and emerging Gallium Nitride (GaN) power transistors are… (More)