High-frequency self-aligned graphene transistors with transferred gate stacks.

@article{Cheng2012HighfrequencySG,
  title={High-frequency self-aligned graphene transistors with transferred gate stacks.},
  author={Rui Cheng and Jingwei Bai and Lei Liao and Hailong Zhou and Yu Chen and Lixin Liu and Yung-Chen Lin and Shan Jiang and Yu Huang and Xiangfeng Duan},
  journal={Proceedings of the National Academy of Sciences of the United States of America},
  year={2012},
  volume={109 29},
  pages={11588-92}
}
Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self… CONTINUE READING
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