High frequency noise and harmonic distortion of 28 nm n and p type MOSFETs

The standard DC and RF and characteristics were measured for the 28 nm p- and n- type MOSFETs. The charge based compact model EKV3 parameters were extracted and verified against measured data. Noise parameters for both n- and p-MOSFETs were measured and analyzed in terms of gate induced noise correlation with the drain current noise, short channel effects… (More)