High-frequency graphene voltage amplifier.

@article{Han2011HighfrequencyGV,
  title={High-frequency graphene voltage amplifier.},
  author={Shu-Jen Han and Keith A. Jenkins and Alberto Valdes Garcia and Aaron D. Franklin and Ageeth A Bol and Wilfried Haensch},
  journal={Nano letters},
  year={2011},
  volume={11 9},
  pages={3690-3}
}
While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5… CONTINUE READING
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