High frequency characterization and compact electrical modelling of graphene field effect transistors

@article{Nakkala2014HighFC,
  title={High frequency characterization and compact electrical modelling of graphene field effect transistors},
  author={P. Nakkala and Antoine Martin and Michel Campovecchio and Henri Happy and Mohamed Salah Khenissa and Mohamed Moez Belhaj and David Mele and Ivy Razado Colambo and E. Pallecchi and Dominique Vignaud},
  journal={2014 44th European Microwave Conference},
  year={2014},
  pages={1452-1455}
}
This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon FET (GNR FET), a compact electrical model was presented accounting the DC and HF characteristics in… CONTINUE READING

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