High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology

  title={High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology},
  author={Siavash Pourkamali and Farrokh Ayazi},
  journal={Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.},
The paper reports on the implementation and characterization of thick bulk mode VHF capacitive disk resonators with reduced motional resistance. Single crystal silicon (SCS) side-supported disk resonators with thickness of 18 /spl mu/m and 10 /spl mu/m and capacitive gaps of 160 nm and 75 nm, respectively (gap aspect-ratio>130), are fabricated on silicon-on-insulator substrates using a 3-mask HARPSS-on-SOI process. Over 20/spl times/ lower motional resistance and larger signal-to-noise ratio… CONTINUE READING
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