High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics

  title={High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics},
  author={T. Palacios and F. Calle and J. Grajal and E. Monroy and M. Eickhoff and O. Ambacher and F. Omnes},
  journal={2002 IEEE Ultrasonics Symposium, 2002. Proceedings.},
  pages={57-60 vol.1}
In this paper, the technology and properties of surface acoustic wave (SAW) devices on AlN and GaN films are reviewed. The excellent characteristics of these materials for high frequency applications are demonstrated by the fabrication of SAW filters with central frequencies higher than 2.2 GHz. The thermal behavior of these filters has been analyzed. Finally, the integration of a SAW generator with a metal-semiconductor-metal photodetector is described, showing the important synergy resulting… Expand
26 Citations

Figures from this paper

SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz
  • 35
FEM analysis of GaN based surface acoustic wave resonators
  • 3
Micromachining and nanoprocessing of GaN/Silicon for SAW and UV photodetector manufacturing
  • PDF
Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructures
  • 5
Ultrananocrystalline Diamond-Based High-Velocity SAW Device Fabricated by Electron Beam Lithography
  • 8
SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations
  • 4
  • PDF


Submicron technology for III-nitride semiconductors
  • 26
Growth and applications of Group III-nitrides
  • 1,212
Piezoelectric materials for acoustic wave applications
  • 227
Surface acoustic wave devices in telecommunications : modelling and simulation
  • 113
Surface Acoustic Wave Devices for Mobile and Wireless Communications
  • 682
Surface Acoustic Wave Devices in Telecommunications
  • 474
  • De Mierry, B. Beaumont, P. Hageman, E. Monroy, F. Calle y E. Muñoz: “Low Pressure MOVPE grown AlGaN for UV photodetector applications”, Mater. Sci. Eng. B 59, 401
  • 1999