High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology

@article{Walker2012HighFF,
  title={High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology},
  author={R. Walker and E. Webster and Jiahao Li and N. Massari and R. Henderson},
  journal={2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)},
  year={2012},
  pages={1945-1948}
}
  • R. Walker, E. Webster, +2 authors R. Henderson
  • Published 2012
  • Materials Science
  • 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)
This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalk characterization chip is reported, featuring a 16×16 SPAD SiPM with on-chip quench, SPAD enable/disable and readout circuitry positioned outside the SPAD array. Recent advances in well sharing are employed to deliver a fill factor of 38%. Integral crosstalk of <;2% was measured between a SPAD and its… Expand
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