High field transport characterization in nano MOSFETs using 10GHz capacitance measurements

@article{Diouf2013HighFT,
  title={High field transport characterization in nano MOSFETs using 10GHz capacitance measurements},
  author={C. Diouf and A. Cros and Daniel Gloria and Julien Rosa and Michel Buczko and G{\'e}rard Ghibaudo},
  journal={2013 IEEE International Electron Devices Meeting},
  year={2013},
  pages={7.6.1-7.6.4}
}
10 GHz capacitance measurements are performed for the first time to reliably measure the inversion charge in downscaled devices. Effective mobility and average velocity are calculated. Obtained backscattering coefficients in both linear and saturation regimes clearly evidence the onset of non-stationnary transport but still far from the ballistic limit operation.