High field conduction mechanism of the evaporated cadmium arsenide thin films

@article{Din1998HighFC,
  title={High field conduction mechanism of the evaporated cadmium arsenide thin films},
  author={Mohammad Din and R. D. Gould},
  journal={ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)},
  year={1998},
  pages={168-174}
}
  • M. Din, R. D. Gould
  • Published 24 November 1998
  • Physics
  • ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)
Cadmium arsenide is a II-V semiconductor which exhibits n-type intrinsic conductivity with high mobility. Potential applications include magnetoresistors and both thermal and photodetectors, which require electrical characterisation over a wide range of deposition and measurement conditions. The films were prepared by vacuum evaporation with deposition rates of 0.5 nm s/sup -1/ and substrate temperatures maintained at constant values of 293 K-393 K. Sandwich-type samples were deposited with… 

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