• Corpus ID: 250144760

High-field charge transport and noise in p-Si from first principles

@inproceedings{Catherall2022HighfieldCT,
  title={High-field charge transport and noise in p-Si from first principles},
  author={David Catherall and Austin J. Minnich},
  year={2022}
}
The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab-initio description of the electron-phonon interaction. Many studies focus on the low-field regime in which the carrier temperature equals the lattice temperature and the current power spectral density (PSD) is proportional to the mobility. The calculation of high-field transport and noise properties offers a stricter test of the theory as these relations no longer hold, yet… 
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