High excitation carrier density recombination dynamics of InGaN / GaN quantum well structures : Possible relevance to efficiency droop

@inproceedings{Davies2013HighEC,
  title={High excitation carrier density recombination dynamics of InGaN / GaN quantum well structures : Possible relevance to efficiency droop},
  author={Matthew J. Davies and T. J. Badcock and Philip E. Dawson and Menno J. Kappers and R A Oliver},
  year={2013}
}
Related Articles Strain assisted inter-diffusion in GaN/AlN quantum dots J. Appl. Phys. 113, 034311 (2013) Spin-filtering and rectification effects in a Z-shaped boron nitride nanoribbon junction J. Chem. Phys. 138, 034705 (2013) Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers Appl. Phys. Lett. 102, 022103 (2013) Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor… CONTINUE READING