High-energy ion implantation for electrical isolation of microelectronic devices

@inproceedings{Ridgway1994HighenergyII,
  title={High-energy ion implantation for electrical isolation of microelectronic devices},
  author={Mark Ridgway and Susan Ellingboe and Robert G. Elliman and James Williams},
  year={1994}
}
Abstract Recent developments in the use of high-energy ion implantation for electrical isolation of both group IV (Si) and III–V (InP, GaAs) devices are presented. For Si devices, dielectric isolation can be achieved with the fabrication of a buried SiO 2 layer by high-dose (∼ 10 18 / cm 2 ), high-energy (1 MeV) O-ion implantation. With MeV implant energies, implant temperatures ( ∼ 150°C) can be significantly reduced compared to those required ( ∼ 550°C) in a conventional, low-energy (150–200… CONTINUE READING