High-energy excitonic photoluminescence due to carrier injection from the barriers into the first excited subband in a GaAs/Al/sub x/Ga/sub 1-x/As quantum well

@article{Tsukamoto2005HighenergyEP,
  title={High-energy excitonic photoluminescence due to carrier injection from the barriers into the first excited subband in a GaAs/Al/sub x/Ga/sub 1-x/As quantum well},
  author={Toshio Tsukamoto and Naomasa Shiraishi and Akihiro Satake and Kosei Fujiwara and H. T. Grahn},
  journal={13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.},
  year={2005},
  pages={271-275}
}
Radiative recombination properties of excitons have been investigated for a GaAs quantum well confined by barriers with an energy gap slightly larger than the energy of the first excited (n = 2) subband exciton. The low-temperature photoluminescence (PL) spectra show a surprisingly intense emission line higher in energy and intensity than the ground-state exciton band. This high-energy PL line remains prominent for excitation power densities between 0.01 and 10 W/cm/sup 2/. It can be clearly… CONTINUE READING
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