High-efficiency silicon RF power amplifier design – current status and future outlook

Abstract

Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still offer superior frequency and breakdown performance with higher Pout and power-added-efficiency (PAE) and faster time-to-market, silicon-based RF PAs do have the advantages in offering… (More)

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Cite this paper

@article{Lie2016HighefficiencySR, title={High-efficiency silicon RF power amplifier design – current status and future outlook}, author={D. Y. C. Lie and Jerry Tsay and Travis Hall and Teja Nukala and J. Lopez}, journal={2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)}, year={2016}, pages={1-4} }