High-efficiency heterogeneously integrated photodiodes on SOI nano-waveguides

We demonstrate InP-based modified uni-traveling carrier (MUTC) photodiodes (PDs) with top p-contact on silicon-on-insulator (SOI) nano-waveguides. The photodiodes have a low dark current of 10 nA, high internal responsivity of 0.84 A/W and bandwidths up to 35 GHz.