High efficiency 100-nm-sized InGaN/GaN active region fabricated by neutral-beam-etching and GaN regrowth for directional micro-LED

@article{Zhang2019HighE1,
  title={High efficiency 100-nm-sized InGaN/GaN active region fabricated by neutral-beam-etching and GaN regrowth for directional micro-LED},
  author={Kexiong Zhang and Tokio Takahashi and Daisuke Ohori and Guangwei Cong and Kazuhiko Endo and Naoto Kumagai and Seiji Samukawa and Mitsuaki Shimizu and Xuelun Wang},
  journal={2019 Compound Semiconductor Week (CSW)},
  year={2019},
  pages={1-1}
}
The influence of regrown GaN on the optical properties of neutral-beam-etched (NBE) nanodisk of InGaN/GaN multiple quantum wells (MQWs) was investigated by excitation-power-dependent photoluminescence (PL) at 5 and 295 K. After regrowth of GaN, the PL peak of nanodisk at both 5 and 295 K increases to a higher energy position by about 40 meV, due to the relaxation of stress in MQWs. The internal quantum efficiency (IQE) of nanodisk after regrowth was increased by 400% 50%, depending on the… CONTINUE READING