High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

@inproceedings{Lim2006HighdensityPE,
  title={High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries},
  author={W. T. Lim and Luc Stafford and Ju-Il Song and J. S. Park and Young Woo Heo and J D Lee and Jeong-Joo Kim and Stephen J. Pearton},
  year={2006}
}
Abstract The dry etching characteristics of transparent and conductive indium–zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl 2 -based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH 4 /H 2 /Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl 2 discharges is smooth, whereas that after etching in… CONTINUE READING