High-current InP-based triple heterojunction tunnel transistors

Abstract

We report the design and simulated performance of a GaAsSb/GaSb/InAs/InP n-type triple heterojunction (3-HJ) tunnel field-effect transistor (TFET). GaAsSb/GaSb source and InAs/InP channel HJs both increase the field imposed upon the tunnel junctions and introduce two resonant bound states. The tunneling probability, and hence the transistor on-current, are… (More)

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@article{Long2016HighcurrentIT, title={High-current InP-based triple heterojunction tunnel transistors}, author={Pengyu Long and Jun Z. Huang and Michael Povolotskyi and D. Verreck and Gerhard Klimeck and Mark J. W. Rodwell}, journal={2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)}, year={2016}, pages={1-2} }