High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD

@article{Mitomo2004HighCT,
  title={High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD},
  author={J. Mitomo and Tomoyuki Hino and Yoshihito Hirano and Hirokazu Narui},
  journal={2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.},
  year={2004},
  pages={71-72}
}
By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature. 

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